Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 954/2164

Part Number	Description	In Stock
2SJ438,MDKQ(J Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	In Stock3,024
2SJ438,MDKQ(M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	In Stock4,824
2SJ438,Q(J Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	In Stock5,364
2SJ438,Q(M Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	In Stock6,264
2SJ598(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,282
2SJ599(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock88,428
2SJ599(0)-Z-E2-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,244
2SJ599(0)-ZK-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,878
2SJ600-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock12,148
2SJ601(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,526
2SJ610(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,262
2SJ648-T1-A Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,783
2SJ649-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 20A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Isolated Tab	In Stock7,866
2SJ652 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 28A TO-220ML Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	In Stock3,582
2SJ652-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 28A TO-220FP-3 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3SG Package / Case: TO-220-3 Full Pack	In Stock8,928
2SJ652-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH TO-220FP-3 Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,236
2SJ652-RA11 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 28A TO-220ML Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	In Stock6,084
2SJ656 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 18A TO-220ML Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	In Stock2,736
2SJ661-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 38A Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 19A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,516
2SJ661-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH I2PAK Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,788
2SJ661-DL-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 38A Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 19A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,806
2SJ661-DL-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH D2PAK Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,006
2SJ661-DL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 38A SMP-FD Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,436
2SJ665-DL-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 27A TO263 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,088
2SJ665-DL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 27A SMP-FD Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,160
2SJ668(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 5A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,202
2SJ673-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 36A TO-220 Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta), 32W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Isolated Tab	In Stock8,946
2SJ681(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PW-MOLD2 Package / Case: TO-251-3 Stub Leads, IPak	In Stock8,892
2SJ687-ZK-E1-AY Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 20A TO-252 Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta), 36W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,158
2SJ690-T1B-AT Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V TSMT Manufacturer: Renesas Electronics America Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SC-96-3, Thin Mini Mold Package / Case: SC-96	In Stock7,812

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