Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Single

ManufacturerToshiba Semiconductor and Storage

Records 377

Page 8/13

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA965-Y(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2,916	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	5,832	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2,592	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,SWFF(M	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	4,698	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	7,128	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6KOJPF(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2,502	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SB1375,CLARIONF(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 60V TO220-3	3,510	-	PNP	3A	60V	1.5V @ 200mA, 2A	10µA (ICBO)	100 @ 500mA, 5V	2W	9MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1457(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5,292	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5,904	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	8,010	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	6,786	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6TOTOF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	3,726	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6YMEF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	7,560	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1481(TOJS,Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 4A 100V TO220-3	6,642	-	PNP	4A	100V	1.5V @ 6mA, 3A	2µA (ICBO)	2000 @ 3A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1495,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 3A 100V TO220-3	8,154	-	PNP	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1495,Q(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 100V TO220-3	7,470	-	PNP	3A	100V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC1627A-O,PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 400MA 80V TO226-3	2,124	-	NPN	400mA	80V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC1627A-Y,PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 400MA 80V TO226-3	2,430	-	NPN	400mA	80V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229(TE6SAN1F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5,058	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(MIT1F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7,218	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(MITIF,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	4,068	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(SHP,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6,984	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(SHP1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7,020	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6MIT1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6,948	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6SAN2FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	6,768	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(T6SHP1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5,256	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	5,616	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(MIT,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	3,526	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(MIT1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	8,334	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2229-Y(SAN2,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3	7,668	-	NPN	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

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