Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 6/27
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 40V 58A DPAK |
24,660 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3.1mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 58A DPAK |
24,642 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 4.5V, 10V | 4.4mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220SIS |
7,344 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | ±30V | 1470pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A SMD |
5,184 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A ES6 |
35,094 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4V | 130mOhm @ 1A, 4V | 1V @ 1mA | - | ±8V | 335pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A VESM |
6,822 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | - | 8Ohm @ 50mA, 4V | - | - | - | 12.2pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
3,258 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 20V 250MA SSM |
5,400 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
4,194 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
X34 PB-F CST3 FET (LF) TRANSISTO |
2,322 |
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π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA CST3C |
2,070 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
7,722 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 20V 100MA CST3 |
3,438 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4V | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 12.2pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 400MA S-MINI |
2,142 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4V, 10V | 1.9Ohm @ 100mA, 4.5V | 2V @ 1mA | 3nC @ 10V | +20V, -16V | 82pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.5A UFV |
7,038 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4V | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | ±8V | 250pF @ 10V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.4A CST3 |
4,374 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | ±8V | 100pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A CST3 |
8,712 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | - | - | ±20V | 9.1pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A CST3B |
7,200 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | - | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 20V 4A SOT23F |
7,938 |
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U-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | ±8V | 410pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A SOT23F |
4,104 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 95mOhm @ 2A, 10V | 2.5V @ 100µA | 1.7nC @ 4.5V | ±20V | 126pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
3,222 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | +6V, -8V | 840pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET NCH 30V 15A UDFNB |
8,874 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 8.9mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | ±20V | 1130pF @ 15V | - | 1.25W (Ta) | 150°C (TA) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 2.6A ES6 |
7,254 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A ES6 |
5,274 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 40.7mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | ±8V | 970pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A SOT-23F |
6,372 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 38mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | ±20V | 340pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 10A UDFN6B |
3,150 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | ±10V | 1400pF @ 6V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A |
8,856 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | ±10V | 1050pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A UF6 |
7,182 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | ±8V | 1650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A UFM |
2,646 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | ±10V | 1010pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANE |
5,274 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 150mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | +20V, -25V | 159pF @ 15V | - | 600mW (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |