Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 9/27
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A TO220SIS |
6,240 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO220SIS |
8,910 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220 |
7,656 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 98W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A TO220SIS |
8,136 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
9,804 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | ±20V | 1990pF @ 25V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A TO220SIS |
6,684 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
8,460 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
15,972 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A TO-220SIS |
5,490 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220 |
11,868 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3000pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V TO220SIS |
6,600 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
12,972 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS |
7,344 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220 |
7,212 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A TO-220SIS |
8,136 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
8,712 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
2,100 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Ta) | 10V | 840mOhm @ 4A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
6,264 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 100A TO-220 |
6,588 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
6,072 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A TO-220 |
7,416 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A TO-220 |
7,128 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220 |
6,840 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | ±20V | 700pF @ 300V | - | 110W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 72A TO-220 |
7,920 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Tc) | 10V | 4.5mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247 |
6,786 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247 |
7,110 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 214A TO220SIS |
4,356 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-247 |
7,722 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
7,794 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-3PN |
7,866 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |