Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 7/27
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-3 |
3,798 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | +12V, -6V | 560pF @ 15V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
5,580 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | ±8V | 331pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
3,042 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6nC @ 10V | ±20V | 150pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
6,840 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.2A S-MINI |
7,884 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V | 4Ohm @ 50mA, 2.5V | - | - | ±20V | 92pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A ES6 |
28,416 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | - | - | ±10V | 11pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UFM |
3,384 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4V | 38mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | ±8V | 1484pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A ES6 |
2,484 |
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U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137pF @ 15V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A |
2,124 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 32.4mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | ±8V | 840pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A VS-6 |
2,502 |
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U-MOSV | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 40mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | ±8V | 700pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A TSON |
8,982 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | ±20V | 820pF @ 15V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 9A 8-TSON |
2,340 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | ±20V | 710pF @ 30V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-SOP ADV |
80,886 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113nC @ 10V | ±20V | 4200pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4,788 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.1V @ 300µA | 41nC @ 10V | ±20V | 3900pF @ 15V | - | 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 19A 8SOP |
3,348 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 6.2mOhm @ 9A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 1W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON |
6,588 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 6.5V, 10V | 7.5mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | ±20V | 1800pF @ 30V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON |
3,168 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Tc) | 10V | 13.3mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | ±20V | 1600pF @ 40V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A DP TO252-3 |
4,986 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 7.5mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | ±20V | 1700pF @ 10V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 14A 8-SOP ADV |
7,830 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 6.5V, 10V | 14mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1300pF @ 30V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A SOP-8 ADV |
25,722 |
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U-MOSIV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.3V @ 1mA | 88nC @ 10V | ±20V | 7800pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-TSON |
3,006 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 10V | 2.2mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | ±20V | 2230pF @ 15V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-TSON |
4,248 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 2.7mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8TSON |
8,352 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 75V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 600V 9.7A DPAK |
8,010 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 60A 8SOP ADV |
2,610 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 4.5V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | ±12V | 10900pF @ 10V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 24A 8-SOP |
5,436 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 13.6mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | ±20V | 1900pF @ 50V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 28A 8-SOP ADV |
48,252 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta) | 4.5V, 10V | 9.4mOhm @ 14A, 10V | 2.3V @ 1mA | 91nC @ 10V | ±20V | 7540pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 15A DPAK |
6,030 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10nC @ 10V | ±20V | 610pF @ 10V | - | 46W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8TSON |
2,844 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A DPAK |
2,178 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 670mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |