Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1165/2164

Part Number	Description	In Stock
FCU4300N80Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 1.6A IPAK Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 100V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock7,434
FCU5N60TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.6A I-PAK Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,258
FCU600N65S3R0 ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V IPAK PKG Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 400V FET Feature: - Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock16,032
FCU7N60TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A I2PAK Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock7,884
FCU850N80Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6A IPAK Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V FET Feature: - Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock17,250
FCU900N60Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 4.5A IPAK Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock14,604
FD70N20PWD ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 70A TO-3P Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock3,204
FDA032N08 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO-3P Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,244
FDA15N65 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 16A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V FET Feature: - Power Dissipation (Max): 260W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock6,192
FDA16N50 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16.5A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V FET Feature: - Power Dissipation (Max): 205W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock3,852
FDA16N50-F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16.5A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V FET Feature: - Power Dissipation (Max): 205W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock7,392
FDA16N50LDTU ON Semiconductor	Transistors - FETs, MOSFETs - Single UNIFET N-CHANNEL 500V MOSFET LDT Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V FET Feature: - Power Dissipation (Max): 205W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN (L-Forming) Package / Case: TO-3P-3, SC-65-3 (Formed Leads)	In Stock9,240
FDA18N50 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V FET Feature: - Power Dissipation (Max): 239W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,226
FDA20N50F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V FET Feature: - Power Dissipation (Max): 388W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock14,274
FDA20N50-F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V FET Feature: - Power Dissipation (Max): 280W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock7,920
FDA24N40F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 23A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V FET Feature: - Power Dissipation (Max): 235W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock10,392
FDA24N50 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V FET Feature: - Power Dissipation (Max): 270W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock6,756
FDA24N50F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A TO-3 Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 25V FET Feature: - Power Dissipation (Max): 270W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock7,290
FDA2712 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 64A TO-3PN Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10175pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,766
FDA28N50 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 28A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V FET Feature: - Power Dissipation (Max): 310W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,304
FDA28N50F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 28A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5387pF @ 25V FET Feature: - Power Dissipation (Max): 310W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock7,056
FDA33N25 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 33A TO-3PN Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V FET Feature: - Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock18,828
FDA38N30 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V TO-3 Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock22,554
FDA50N50 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,304
FDA59N25 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 59A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V FET Feature: - Power Dissipation (Max): 392W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,348
FDA59N30 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 59A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock22,104
FDA62N28 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 280V 62A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 280V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock5,472
FDA69N25 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 69A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock16,704
FDA70N20 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 70A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,732
FDA75N28 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 280V 75A TO-3P Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 280V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,388

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