Toshiba Semiconductor and Storage Transistors - IGBTs - Single
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CategorySemiconductors / Transistors / Transistors - IGBTs - Single
ManufacturerToshiba Semiconductor and Storage
Records 5
Page 1/1
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
IGBT 400V 1W 8-SOIC |
6,030 |
|
- | - | 400V | - | 200A | 2.3V @ 4V, 200A | 1W | - | Standard | - | 3.1µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
|
|
|
Toshiba Semiconductor and Storage |
IGBT 600V 10A 60W TO220SM |
7,830 |
|
- | - | 600V | 10A | 20A | 2.7V @ 15V, 10A | 60W | - | Standard | - | 400ns/400ns | 300V, 10A, 100Ohm, 15V | 200ns | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM |
|
|
|
Toshiba Semiconductor and Storage |
IGBT 1000V 60A 170W TO3P LH |
7,254 |
|
- | - | 1000V | 60A | 120A | 2.8V @ 15V, 60A | 170W | - | Standard | - | 330ns/700ns | - | 2.5µs | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |
|
|
|
Toshiba Semiconductor and Storage |
IGBT 400V 600MW 8TSSOP |
4,896 |
|
- | - | 400V | - | 150A | 2.9V @ 4V, 150A | 600mW | - | Standard | - | 1.7µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
Toshiba Semiconductor and Storage |
IGBT 600V 50A 240W TO3P LH |
2,448 |
|
- | - | 600V | 50A | 100A | 2.45V @ 15V, 50A | 240W | 1.3mJ (on), 1.34mJ (off) | Standard | - | 90ns/300ns | 300V, 50A, 13Ohm, 15V | - | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |